Structure of a CMOS image sensor
US6906364B2 · kind B2 · utility
3Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.