Testable electrostatic discharge protection circuits
US6906386B2 · kind B2 · utility
19Cited by
2References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.