Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same
US6906421B1 · kind B1 · utility
7Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1998 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Aug 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of forming a local interconnect and a semiconductor device comprising a local interconnect. The semiconductor device comprises:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.