Support-integrated donor wafers for repeated thin donor layer separation
US6908828B2 · kind B2 · utility
26Cited by
9References
21Claims
0Family size
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Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes that may be used in producing electronic, optoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.