Structure of quantum dot light emitting diode and method of fabricating the same
US6909108B2 · kind B2 · utility
8Cited by
1References
6Claims
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Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Nov 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.