Semiconductor component manufacturing plant with ventilated false floor
US6910497B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 1, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Jan 14, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/86083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the invention, a semiconductor component manufacturing plant is constructed in a building having an upper storey and a lower storey separated from one another by a support slab and a false floor. The support slab has passageway openings, whilst the false floor consists of plates themselves having through passages. Vacuum generation means are disposed in an intermediate space situated between the support slab and the false floor which itself carries a process chamber situated in the upper space constituting a clean room. Suction means situated in the lower storey create a gaseous flow directed downwards from the clean room through the intermediate space to the lower storey. In this way, the false floor acts as a non-return mechanism for noise, thermal or chemical pollution coming from the vacuum generation means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.