Plasma processing method and apparatus using dynamic sensing of a plasma environment
US6911157B2 · kind B2 · utility
14Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Jan 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.