Polymer thin-film transistor with contact etch stops
US6911354B2 · kind B2 · utility
1Cited by
2References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 8, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Oct 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.