Ultra-high capacitance device based on nanostructures
US6911373B2 · kind B2 · utility
15Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2002 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Sep 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric.The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.