Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US6911375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.