Selective heating using flash anneal
US6911376B2 · kind B2 · utility
20Cited by
5References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 1, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Oct 1, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process, which includes implanting hydrogen ions into a silicon substrate, overlaying the silicon substrate on to a support substrate, and applying a flash anneal heat treatment to the silicon and support substrates to cause the silicon substrates to separate at a region defined by the implanted hydrogen ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.