Semiconductor device and method of manufacturing the same
US6911405B2 · kind B2 · utility
3Cited by
10References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.