Sacrificial layers for use in fabrications of microelectromechanical devices
US6913942B2 · kind B2 · utility
90Cited by
20References
53Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Jul 26, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0107
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.