Semiconductor device and method of manufacturing the same
US6913970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Oct 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.