Semiconductor device with components embedded in backside diamond layer
US6913999B2 · kind B2 · utility
2Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate with integrated circuit devices on its front side and a high thermal conductivity layer such as diamond on its back side, with components such as capacitors embedded in the high thermal conductivity layer and coupled to the front side integrated circuits with vias through the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.