In-situ discharge to avoid arcing during plasma etch processes
US6914007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Apr 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing a charge on a substrate to prevent an arcing incident in a subsequent etch process is described. A patterned substrate is fastened to a chuck in a process chamber. A discharge process is performed that includes the three steps of (a) coupling the chuck to a 0 volt connection, (b) generating a plasma, and (c) coupling the chuck to a high voltage connection. The three steps are carried out in any sequence. An inert gas or an inert gas and an etching gas are flowed into the chamber during the discharge sequence. Alternatively, a fluorocarbon CXFYHZ or a fluorocarbon and a gas such as O2, H2, N2, N2O, CO, CO2, He or Ar is flowed into the chamber during the discharge sequence. The method is compatible with batch or single wafer processes and is extendable to etching low k dielectric layers with poor thermal conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.