Plasma processing method
US6914207B2 · kind B2 · utility
3Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Oct 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.