Semiconductor trench isolation structure
US6914316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Jul 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench structure of a semiconductor device includes first and second regions of a substrate having first and second trenches, respectively, the first trench having an aspect ratio larger than that of the second trench, a first insulation material on a bottom and sidewalls of the first trench forming a first sub-trench in the first trench, a second insulation material completely filling the first sub-trench, a third insulation material formed on a bottom and sidewalls of the second trench forming a second sub-trench in the second trench, a fourth insulation material formed on a bottom and sidewalls of the second sub-trench, and a fifth insulation material completely filling a third sub-trench formed in the second sub-trench by the fourth insulation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.