High efficiency triple well charge pump circuit
US6914791B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Oct 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved charge pump circuit is provided using a triple-well structure where the charge pump circuit has a plurality of stages containing N-channel MOSFET devices in which each stage is contained in a P-well within a Deep N-well residing on a P-substrate. Each pump stage is formed in its own P-well and the pumping stages are serially connected from power supply source to the output terminal. Each pumping stage includes a charge transfer device, a first auxiliary device to precharge the gate of the charge transfer device with a voltage from the previous stage, and a second auxiliary device to switch coupling between the charge transfer device and its substrate region to reduce the body effect and increases the capacitive boosting effect. The multiple stages of circuitry are clocked from either a four-phase clock or a two-phase clock.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.