Memory cell strings
US6914809B2 · kind B2 · utility
92Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.