Target comprising thickness profiling for an RF magnetron
US6916407B2 · kind B2 · utility
31Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2001 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.