Copolymer, photoresist compositions thereof and deep UV bilayer system thereof
US6916543B2 · kind B2 · utility
14Cited by
3References
68Claims
0Family size
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Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Oct 31, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.