Enhancement of P-type metal-oxide-semiconductor field effect transistors

US6916727B2 · kind B2 · utility

Assignee

• Massachusetts Institute of Technology · US

Inventors

• Christopher Leitz · Nashua, US
• Minjoo L. Lee · Cambridge, US
• Eugene A. Fitzgerald · Windham, US

Key dates

• Filing date: Jun 21, 2002
• Grant date: Jul 12, 2005
• Expiry date: Nov 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.