Semiconductor device
US6917054B2 · kind B2 · utility
16Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Oct 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device includes a trench formed on a source side of a drift region, a p-type gate region and a gate formed at the bottom of the trench, and the source formed over the entire surface of the unit device through an insulating film. The narrowest portion of a channel of the device is deeper than one-half the junction depth of the p-type gate region. This allows the width of the channel on the drain side to be reduced even when a lower energy ion implantation manufacturing process is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.