Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps
US6917106B2 · kind B2 · utility
27Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 15, 2004 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jun 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.