Single layer capacitor with dissimilar metallizations
US6917509B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/049
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A single layer ceramic capacitor for wire bonding or solder or epoxy attachment wherein a bottom metallization is of a lesser purity than a top metallization whereby the bottom metallization may be effectively soldered without leaching of the metal and the top metallization may be wire bonded. In an exemplary embodiment, the top metallization is essentially pure gold and the bottom metallization is an alloy of gold and platinum and/or palladium. The top and bottom metallizations are provided on a dielectric body that advantageously comprises a ceramic having a sintering temperature below the melting point of gold. In a further exemplary embodiment, the capacitance of the capacitor may be enhanced by providing one or more interior metallization planes parallel to the exterior metallizations and connected thereto by conductive vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.