High-density NVRAM
US6917539B2 · kind B2 · utility
99Cited by
20References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jun 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
High density NVRAM. An array of memory cells capable of storing at least a megabit of information, each memory cell including a memory plug that includes a memory element that switches from a first resistance state to a second resistance state upon application of a first write voltage of a first polarity and reversibly switches from the second resistance state to the first resistance state upon application of a second write voltage of polarity opposite to the first polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.