UNITY SEMICONDUCTOR
297Patents
253Active
297Granted
59Portfolio score
Filing activity: Dec 26, 2002 → Jul 12, 2024 · 112 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6753561B1 | Cross point memory array using multiple thin films | Physics | 260 | Expired |
| US7719876B2 | Preservation circuit and methods to maintain values representing data in one or more layers of memory | Physics | 229 | Active |
| US7020006B2 | Discharge of conductive array lines in fast memory | Physics | 160 | Expired |
| US6834008B2 | Cross point memory array using multiple modes of operation | Physics | 117 | Expired |
| US6836421B2 | Line drivers that fit within a specified line pitch | Physics | 114 | Expired |
| US8045364B2 | Non-volatile memory device ion barrier | Physics | 113 | Active |
| US7538338B2 | Memory using variable tunnel barrier widths | Physics | 111 | Expired |
| US7067862B2 | Conductive memory device with conductive oxide electrodes | Physics | 106 | Expired |
| US6965137B2 | Multi-layer conductive memory device | Physics | 105 | Expired |
| US6970375B2 | Providing a reference voltage to a cross point memory array | Physics | 103 | Expired |
| US6917539B2 | High-density NVRAM | Physics | 99 | Expired |
| US6856536B2 | Non-volatile memory with a single transistor and resistive memory element | Physics | 96 | Expired |
| US6859382B2 | Memory array of a non-volatile ram | Electricity | 93 | Expired |
| US7372753B1 | Two-cycle sensing in a two-terminal memory array having leakage current | Physics | 91 | Active |
| US6870755B2 | Re-writable memory with non-linear memory element | Physics | 85 | Expired |
| US7379364B2 | Sensing a signal in a two-terminal memory array having leakage current | Physics | 85 | Active |
| US7054183B2 | Adaptive programming technique for a re-writable conductive memory device | Physics | 85 | Expired |
| US6940744B2 | Adaptive programming technique for a re-writable conductive memory device | Physics | 79 | Expired |
| US6850455B2 | Multiplexor having a reference voltage on unselected lines | Physics | 73 | Expired |
| US7884349B2 | Selection device for re-writable memory | Electricity | 67 | Active |
| US7701791B2 | Low read current architecture for memory | Physics | 64 | Active |
| US7149108B2 | Memory array of a non-volatile RAM | Electricity | 64 | Expired |
| US7057914B2 | Cross point memory array with fast access time | Physics | 63 | Expired |
| US7079442B2 | Layout of driver sets in a cross point memory array | Physics | 63 | Expired |
| US7009909B2 | Line drivers that use minimal metal layers | Physics | 60 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.