Silicon on insulator (SOI) transistor and methods of fabrication
US6919238B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6727
Abstract
The present invention is a silicon on insulator (SOI) transistor and its method of fabrication. According to the present invention, an opening is formed in the insulating layer formed on a single crystalline silicon substrate. An amorphous or polycrystalline silicon or silicon alloy is then formed in the opening on the single crystalline silicon substrate and on the insulating layer. The amorphous or polycrystalline silicon or silicon alloy in the opening and at least a portion of the amorphous or polycrystalline silicon or silicon alloy on the insulating layer is crystallized into a single crystalline silicon or silicon alloy film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.