Gate dielectric and method
US6919251B2 · kind B2 · utility
19Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.