Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer
US6919252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | May 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A MOS semiconductor device formed on a substrate of a first conductivity type is provided. The device includes active zones for elementary active elements, and at least one inactive zone suitable for electric signal input or output. The substrate is connected with the drain terminal of the device, and at least one of the elementary active elements includes a body region of a second conductivity type that is connected with the source terminal of the device. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The silicon oxide layer has alternating first zones and second zones that are contiguous to each other, with the first zones having a greater thickness than the second zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.