Antonino Schillaci
15Patents
5h-index
10Co-inventors
63Inventor score
Filing activity: Feb 22, 1996 → May 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6365930B1 | Edge termination of semiconductor devices for high voltages with resistive voltage divider | Electricity | 116 | Expired |
| US5798554A | MOS-technology power device integrated structure and manufacturing process thereof | Electricity | 110 | Expired |
| US6051862A | MOS-technology power device integrated structure | Electricity | 14 | Expired |
| US6111297A | MOS-technology power device integrated structure and manufacturing process thereof | Electricity | 12 | Expired |
| US5841167A | MOS-technology power device integrated structure | Electricity | 10 | Expired |
| US6750512B2 | MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer located between a semiconductor region and a conductive layer | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6919252B2 | Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9899508B1 | Super junction semiconductor device for RF applications, linear region operation and related manufacturing process | Electricity | 2 | Active |
| US7186592B2 | High performance, integrated, MOS-type semiconductor device and related manufacturing process | Electricity | 2 | Expired |
| US6933563B2 | High performance, integrated, MOS-type semiconductor device and related manufacturing process | Electricity | 0 | Expired |
| US8366941B2 | Process for exothermal treatment and recovery of solid, semi-solid, pasty and/or damp waste | Chemistry; Metallurgy | 0 | Active |
| US11024707B2 | Charge balance semiconductor device, in particular for high efficiency RF applications, and manufacturing process thereof | Electricity | 0 | Active |
| US9508846B2 | Vertical MOS semiconductor device for high-frequency applications, and related manufacturing process | Electricity | 0 | Active |
| US12057474B2 | Charge balance semiconductor device, in particular for high efficiency RF applications, and manufacturing process thereof | Electricity | 0 | Active |
| US8759188B2 | Radiation hardened bipolar injunction transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.