High pressure processing chamber for semiconductor substrate

US6921456B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Maximilian A. Biberger · Scottsdale, US
• Frederick P. Layman · Carefree, US
• Thomas Sutton · Fremont, US

Key dates

• Filing date: Jul 24, 2001
• Grant date: Jul 26, 2005
• Expiry date: Nov 23, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67751
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.