Method of processing substrates
US6921493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2002 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform/nitrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum interconnection pattern in the semi-conductor, and the function of the water vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.