Method of film deposition using single-wafer-processing type CVD
US6921556B2 · kind B2 · utility
242Cited by
8References
11Claims
0Family size
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Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Jul 13, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.