Method for manufacturing a semiconductor device with a trench termination
US6921699B2 · kind B2 · utility
13Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 29, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Sep 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.