Plasma treating apparatus and plasma treating method
US6921720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2002 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | May 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6a turned toward the mounting surface 3d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.