Power MOSFET and method for forming same using a self-aligned body implant
US6921939B2 · kind B2 · utility
23Cited by
34References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2001 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Apr 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the trench, and forming a dielectric layer to fill an upper portion of the trench. Portions of the semiconductor layer laterally adjacent the dielectric layer are removed so that an upper portion thereof extends outwardly from the semiconductor layer. Spacers are formed laterally adjacent the outwardly extending upper portion of the dielectric layer, the spacers are used as a self-aligned mask for defining source/body contact regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.