Low forward voltage drop schottky barrier diode and manufacturing method therefor
US6921957B2 · kind B2 · utility
6Cited by
2References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon to form a barrier metal layer between the substrate and the surface metal layer for forming the Schottky barrier diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.