Determination of minority carrier diffusion length in solid state materials
US6922067B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Nov 26, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and method is provided for determining the minority carrier diffusion length from the back side of the wafer within predetermined areas using pattern recognition system. In particular embodiments SPV probe includes transparent and non-transparent electrodes, to provide measurement of SPV and in area larger than optical beam and to provide accurate determination of diffusion length with spatial resolution <1 mm. The apparatus includes the ability to measure diffusion length from the areas under special areas within scribe line of patterned wafer. This apparatus and method provides a determination of the diffusion length to control metal contamination in product including patterned wafers including measurement within scribe lines and full wafer mapping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.