Method and compositions for hardening photoresist in etching processes
US6923920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Feb 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.