Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion
US6924078B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.