Semiconductor substrate made of group III nitride, and process for manufacture thereof
US6924159B2 · kind B2 · utility
56Cited by
2References
37Claims
0Family size
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Key dates
| Filing date | Mar 26, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Mar 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.