Method for producing a thyristor

US6924177B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Daniel Reznik · Berlin, DE

Key dates

• Filing date: Dec 22, 2003
• Grant date: Aug 2, 2005
• Expiry date: Dec 22, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/00

Abstract

A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field stop zone of the second conductivity type be disposed approximately in the center of the second zone, with the result that it subdivides the second zone into two sections of essentially the same size. To that end, the field stop layer is produced on an inner surface of a first wafer or of a second wafer, and the first wafer is connected to the second wafer, such that the two inner surfaces of the two wafers lie one on top of the other.