Capacitor
US6924193B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 13, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.