Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper
US6924234B2 · kind B2 · utility
3Cited by
11References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.