Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation
US6924239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform nitridation of the substrate. The method comprises placing the substrate in a process chamber and flowing an oxygen-source gas into the process chamber. A first plasma is formed in the process chamber for a first predetermined amount of time, wherein the hydrocarbons combine with one or more species of the oxygen-source gas in radical form to form product gases. The gases are removed from the process chamber and a nitrogen-source gas is flowed into the process chamber. A second plasma is then formed in the process chamber for a second predetermined amount of time, therein nitriding the substrate in a significantly uniform manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.