Semiconductor light-emitting device and process for producing the same
US6924500B2 · kind B2 · utility
20Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.