Semiconductor device and method of manufacturing the same
US6924518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Dec 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.