Method for detecting flare noise of semiconductor device
US6924886B2 · kind B2 · utility
2Cited by
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5Claims
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Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Feb 20, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03B27/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for instantaneously detecting flare noise within patterns of the semiconductor device, which includes the steps of preparing a mask having a plurality of exposed areas having different light energy levels when being photo exposed and providing a plurality of dummy patterns with different sizes for detecting flare noises in each exposed area; forming dummy patterns on a wafer through a photolithography process with the mask; and detecting the flare noise by comparing the dummy patterns in each exposed area with an optical microscope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.